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Electric field dependence of mobility fluctuation 1/f; noise in elemental semiconductors
Authors:RP Jindal  A van der Ziel
Affiliation:E.E. Department, University of Minnesota, Minneapolis, MN 55455, U.S.A.
Abstract:It is shown that Bosman's empirical formula α(E) = α(0)/1 + (E/Ec′)2] for the field dependence of Hooge's parameter can be explained if it is assumed that only the low-field value μaco of the acoustical mobility μac fluctuates and that μac = μaco 1 + (E/Ec′)2]12.
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