| 氮分压对磁控溅射制备TaN薄膜性能的影响 |
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| 引用本文： | 康杰,张万里,吴传贵,向阳,王超杰. 氮分压对磁控溅射制备TaN薄膜性能的影响[J]. 电子元件与材料, 2009, 28(6). DOI: 10.3969/j.issn.1001-2028.2009.06.014 |
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| 作者姓名： | 康杰 张万里 吴传贵 向阳 王超杰 |
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| 作者单位： | 电子科技大学,电子薄膜与集成器件国家重点实验室,四川,成都,610054 |
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| 摘 要： | 采用直流反应磁控溅射法制备了TaN薄膜,研究了φ(N2)对薄膜的结构和性能影响。研究发现,在N2分压(体积分数)为9%时,多相共存的TaN薄膜表现出TaN(200)面择优取向,方阻和αt达到最佳,其值为52Ω/□和–306×10–6/℃。薄膜的方阻、电阻温度系数αt和晶粒尺寸都随着N2分压的增大而增大:当N2分压高于11%时,薄膜的方阻和αt增长较快。
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| 关 键 词： | TaN薄膜 磁控溅射 N2分压 方阻 电阻温度系数 |
Effects of N_2 partial pressure on the properties of TaN thin films deposited by DC reactive magnetron sputtering |
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| KANG Jie,ZHANG Wanli,WU Chuangui,XIANG Yang,WANG Chaojie. Effects of N_2 partial pressure on the properties of TaN thin films deposited by DC reactive magnetron sputtering[J]. Electronic Components & Materials, 2009, 28(6). DOI: 10.3969/j.issn.1001-2028.2009.06.014 |
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| Authors: | KANG Jie ZHANG Wanli WU Chuangui XIANG Yang WANG Chaojie |
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| Affiliation: | State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China |
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| Abstract: | TaN films were deposited by DC reactive magnetron sputtering.The effects of N2 partial pressure on the microstructure and properties of TaN films were studied.The multiphase is coexistent in the films.When the N2 partial pressure is 9%,the phases in the as-deposited films are identified as TaN(200).The optimized sheet resistance and αt are 52Ω/□ and –306×10–6 /℃.In addition,the grain size and the properties of the films such as sheet resistance andαt are increased with the rising of the N2 partial pressure.The sheet resistance and αt increase dramatically when the N2 partial pressure is over 11%. |
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| Keywords: | TaN thin films magnetron sputtering sheet resistance N2 partial pressure temperature coefficient of resistance |
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