A Wave Approach to Signal and Noise Modeling of Dual-Gate MESFET

A new procedure for signal and noise modeling of dual-gate MESFET is described in this paper. The small-signal model is based on two cascoded single-gate MESFET intrinsic equivalent circuits embedded in a network representing device parasitics. The wave interpretation of noise is used for defining the noise parameters of each single gate MESFET. Applying this approach, a CAD oriented procedure for extracting the dual-gate MESFETmodel parameters as well as the noise wave temperatures is developed. Modeled scattering and noise parameter characteristics are comparedto the measured ones and quite a good agreement is observed.