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热等离子体雾态气化制备薄膜技术
引用本文:宫华,黄晖,汪敏强,姚熹. 热等离子体雾态气化制备薄膜技术[J]. 硅酸盐通报, 2004, 23(3): 45-49
作者姓名:宫华  黄晖  汪敏强  姚熹
作者单位:长安大学材料工程系,西安,710054;西安交通大学电子陶瓷与器件教育部重点实验室,西安,710049
基金项目:中国-以色列国际合作项目(2002-2003),973计划项目(20002CB613305)
摘    要:热等离子体雾态气化制备薄膜技术(mist plasma evaporation, MPE)以液态源物质溶液为先体,采用超声雾化将先体溶液雾化为细小液滴,用载气将雾化液滴输运到射频感应热等离子体中,利用热等离子体的超高温,将液滴中的源物质彻底气化和分解为其组分粒子,通过气相输运,最终在基片上沉积薄膜.MPE制备薄膜技术采用单一先体溶液,源物质来源广泛,沉积速率快,不需后续热处理.本文介绍了MPE制备薄膜技术原理及工艺,综述了近年来在制备薄膜方面的研究进展.

关 键 词:热等离子体雾态气化  热等离子体  超声雾化  MOCVD,

Mist Plasma Evaporation Technique for Preparation of Thin Films
Gong Hua. Mist Plasma Evaporation Technique for Preparation of Thin Films[J]. Bulletin of the Chinese Ceramic Society, 2004, 23(3): 45-49
Authors:Gong Hua
Abstract:Mist plasma evaporation (MPE) has been used to prepare thin films. In the MPE technique, liquid solution of source materials is used as precursor, and is ultrasonically atomized into tiny droplets. The droplets are introduced into radio frequency inductively coupled thermal plasma. Source materials in the droplets are evaporated and decomposed to their components by the ultrahigh temperature of the thermal plasma, and then reacted and deposited on substrate to form thin films during plasma cooling process. MPE technique shows remarkable advantages such as single precursor, wide choices of source materials, high deposition rate, and no subsequent annealing. In this paper, the theory and process of MPE were introduced, and the recent progresses in preparing thin films were reviewed.
Keywords:mist plasma evaporation thermal plasma ultrasonic atomizing MOCVD
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