Microstructure and Orientation of TiSi2Layers on (111) Si

The microstructure and orientation of TiSi₂films produced by pulsed illumination of Ti layers on (111) Si with incoherent light and by vacuum evaporation of Ti onto heated (111) Si substrates were studied by transmission electron microscopy. Both theC49- and C54-TiSi₂grains were found to have a number of orientations satisfying the basic crystallographic rules: a high density of coinciding sites at the interface and continuity of high-density planes across the interface. The TiSi₂/Si interfaces studied were shown to be incoherent. The major structural defects in TiSi₂layers were identified.