Novel low-temperature C-V technique for MOS doping profiledetermination near the Si/SiO2 interface |
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Authors: | Pirovano A. Lacaita A.L. Pacelli A. Benvenuti A. |
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Affiliation: | Dipt. di Elettronica Inf., Politecnico di Milano ; |
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Abstract: | An inverse modeling technique for doping profile extraction from MOS C-V measurements is presented. The method exploits the “kink” effect observed near flat bands in low-temperature C-V curves to accurately estimate the dopant concentration at the oxide-silicon surface. The inverse modeling approach, based on a self-consistent Schrodinger-Poisson solver, overcomes the limitations of previous analytical methods. The accuracy of the doping extraction is demonstrated by successfully reconstructing doping profiles from simulated C-V curves, including abrupt variations of doping in the vicinity of the oxide interface. When applied to experimental data from boron- and phosphorus-doped samples, the technique is shown to provide a substantial improvement in resolution with respect to room-temperature C-V measurements |
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