Modeling the Inelastic Scattering Effect on the Resonant Tunneling Current |
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| Authors: | Bogdan Majkusiak |
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| Affiliation: | (1) Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland |
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| Abstract: | Resonant tunneling current with the inelastic scattering effect is modeled basing on the sequential tunneling approach. Simulations
are performed for the case of a silicon double gate (n+)polySi/SiO2/(i)Si/SiO2/(n+)polySi structure |
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| Keywords: | Nanoelectronics Resonant tunneling diode DG MOS structure Scattering |
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