| BaO-3TiO_2微波介质陶瓷的H_3BO_3掺杂改性研究 |
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| 引用本文： | 何春中,张树人,唐斌,周晓华. BaO-3TiO_2微波介质陶瓷的H_3BO_3掺杂改性研究[J]. 电子元件与材料, 2010, 29(5). DOI: 10.3969/j.issn.1001-2028.2010.05.004 |
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| 作者姓名： | 何春中 张树人 唐斌 周晓华 |
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| 作者单位： | 电子科技大学,电子薄膜与集成器件国家重点实验室,四川,成都,610054 |
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| 摘 要： | 为实现低温烧结,采用固相反应法制备了H3BO3掺杂改性的BaO-3TiO2微波介质陶瓷,研究了H3BO3掺杂量对其烧结温度和介电性能的影响,并与H3BO3掺杂改性的BaTi4O9陶瓷进行了对比研究。结果表明,H3BO3掺杂能使BaO-3TiO2陶瓷的烧结温度降低到950℃,原因是烧结过程中形成了熔点约为899℃的液相BaB2O4。当掺杂质量分数为3%的H3BO3时,制备的BaO-3TiO2微波介质陶瓷具有良好的介电性能:εr=34.1,Q·f=9000GHz(4.0GHz),略优于H3BO3掺杂改性的BaTi4O9陶瓷。
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| 关 键 词： | 微波介质陶瓷 低温烧结 BaO-3TiO2 BaB2O4 |
H3BO3-doping modification study of BaO-3TiO2 microwave dielectric ceramics |
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| HE Chunzhong,ZHANG Shuren,TANG Bin,ZHOU Xiaohua. H3BO3-doping modification study of BaO-3TiO2 microwave dielectric ceramics[J]. Electronic Components & Materials, 2010, 29(5). DOI: 10.3969/j.issn.1001-2028.2010.05.004 |
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| Authors: | HE Chunzhong ZHANG Shuren TANG Bin ZHOU Xiaohua |
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| Abstract: | H3BO3-doping modified BaO-3TiO2 microwave dielectric ceramics were prepared using the solid state reaction method to realize low-temperature sintering.Comparing with H3BO3-doping modified BaTi4O9 ceramics,the effects of the H3BO3-doping amount on the sintering temperature and dielectric properties of the BaO-3TiO2 ceramics were studied.The results show that the BaO-3TiO2 ceramics doped with H3BO3 can be sintered at a lower temperature of 950 ℃,which is attributed to the formation of BaB2O4 liquid phase whose melting point is around 899 ℃ during the sintering.With 3%(mass fraction) H3BO3-doping,the BaO-3TiO2 ceramic sintered at 950 ℃ for 2 h possesses good microwave dielectric properties:εr = 34.1 and Q·f = 9000 GHz(at 4.0 GHz),which are a little better than those of H3BO3-doping modified BaTi4O9 ceramic. |
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| Keywords: | BaO-3TiO2 BaB2O4 |
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