High pressure effect on MoS2 and MoSe2 single crystals grown by CVT method |
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| Authors: | Madhavi Dave Rajiv Vaidya S. G. Patel A. R. Jani |
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| Affiliation: | (1) Department of Physics, Sardar Patel University, 388 120 Vallabh Vidyanagar, India |
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| Abstract: | Single crystals of MoS2 and MoSe2 were grown by chemical vapour transport method using iodine as a transporting agent and characterized by optical microscopy, energy dispersive analysis (EDAX), X-ray powder diffraction (XRD) and Hall mobility at room temperature. The variation of electrical resistance under pressure was monitored in a Bridgman anvil set-up up to 6.5 GPa to identify occurrence of any structural transition. MoS2 and MoSe2 do not undergo any structural transitions under pressure. |
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| Keywords: | Single crystals chemical vapour transport technique high pressure |
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