Suppression of sputtering of nickel by coverage with self-sustaining thin segregated carbon layers

Sputtering of two-layered films composed of nickel (~5000 Å) and nickel carbide (~1500 Å) at 600° C by 5 keV Ar⁺ bombardment on the nickel side has been studied using Rutherford backscattering of 1.3 MeV H⁺ ions. It is found that the removal rate of nickel atoms from specimens is dependent on ion current density and that the removal rate of nickel atoms is very much smaller than that of carbon atoms when the ion current density is low. During ion bombardments at a low current density carbon segregation by a thickness of nearly two monolayers is observed at the nickel surface. Thus suppression of the removal rate of nickel atoms is ascribed to coverage of the nickel surface with segregated carbon atoms which are continuously supplied by diffusion through the nickel film from the carbide layer.