脉冲偏压对等离子体沉积DLC膜化学结构的影响

以乙炔为气源，用等离子体基脉冲偏压沉积（plasma based pulsd bias deposition缩写PBPBD）技术进行了不同负脉冲偏压条件下制备DLC膜的试验，通过X射线光电子谱（XPS）、激光喇曼光谱Raman]以及电阻分析方法考察了负脉冲偏压幅值对DLC膜化学结构的影响，结果表明由-50kV到-10kV随负脉冲偏压降低，DLC膜中SP^3键分数单调增加，但当脉冲偏压为0时形成高电阻的类聚合物膜，说明荷能离子的轰击作用形成DLC化学结构的必要条件，键角混乱度和SP^2簇团尺寸与脉冲偏压之间不具有单调关系，在中等幅值负脉冲偏压条件下，键用混乱度较大且SP^2簇团尺寸细小。

Effect of pulsed bias on chemical structure of DLC films prepared by plasma processing

An attempt has been made to prepare DLC(diamond like carbon)films by PBPBD(plasma based pulsed bias deposition)technique with C 2 H 2 and different negative pulsed bias.The chemical structure of the DLC films were characterized by X-ray photoelectron spectroscopy(XPS),Raman spectroscopy and elec-trical resistance.The results show that the SP 3 fraction monotonically increased with the decrease in the peak value of the negative pulsed bias.However,the bombardment of the energetic ions was the essential condition for the formation of DLC film in chemical structure due to the polymer-like film formed when the pulsed bias equals zero.It appears that no monotonic relationship for the effect of pulsed bias on the size of SP 2 cluster and bond-angle disorder.It was found that the bond-angle disorder was higher and the SP 2 clusters were fine under the medium peak value of the negative pulsed bias condition.