Microstructural and thermal characterizations of light-emitting diode employing a low-temperature die-bonding material |
| |
| Affiliation: | 1. Department of Chemical Engineering, National Chung Hsing University, Taichung 402, Taiwan;2. Department of Chemical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan;3. Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan;4. Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;1. Department of Electrical and Electronic Engineering, University of Cagliari, Cagliari, Italy;2. Intraspec Technologies, 3 avenue Didier Daurat, 31400 Toulouse, France;3. CNES, 18 avenue Edouard Belin, 31401 Toulouse Cedex 9, France;1. Robert Bosch GmbH, Reliability Modeling and System Optimization (AE/EDT3), Reutlingen 72703, Germany;2. Mechanical Engineering Department, University of Maryland College Park, MD 20742, USA;3. Fraunhofer-Institut für Betriebsfestigkeit und Systemzuverlässigkeit LBF, Darmstadt 64289, Germany;1. Public Authority for Applied Education and Training, College of Technological Studies, Department of Chemical Engineering, 70654, Kuwait;2. Silesian University of Technology, Department of Chemical and Process Engineering, M. Strzody 7, 44-100 Gliwice, Poland;3. Silesian University of Technology, Institute of Thermal Technology, Konarskiego 22, 44-100 Gliwice, Poland |
| |
| Abstract: | A Sn/Bi bilayer was deposited on a hot air solder leveling (HASL)-treated metal-core printed circuit board (MCPCB) using electroplating as a low-temperature die-bonding material for light-emitting diode (LED). The eutectic feature of the Sn/Bi contact enabled the die-bonding process to accomplish through a liquid/solid reaction at 185 °C with a proper compression force. A high-temperature die-bonding structure composed of a Bi layer sandwiched by two intermetallic compounds (IMCs) formed after thermocompression. Employment of the Sn/Bi bilayer for low-temperature die-bonding prevented the LEDs from thermal stress problems, and the resulting high-temperature IMC/Bi/IMC die-bonding structure was capable of withstanding multiple bonding reactions and high temperature/current operation environment. Durability tests including mechanical, thermal, and optical performance were systematically performed and compared with other commercially available die-bonding materials (Ag paste and solder alloys). |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
