Lifetime tests of 600-V GaN-on-Si power switches and HEMTs |
| |
| Affiliation: | 1. University of Padova, Department of Information Engineering, via Gradenigo 6/B, 35131 Padova, Italy;2. Ferdinand Braun Institut, Leibniz Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany;3. TU Wien, Floragasse 7, 1040 Wien, Austria |
| |
| Abstract: | We present the first systematic lifetime tests which show excellent long-term reliability for 600 V GaN-on-Si power switches.High voltage accelerated life testing in the OFF-state yields a field related mean-time-to-failure (MTTF) greater than 3 × 108 h for a 600 V operating condition. High temperature accelerated testing in the ON-state gives an MTTF of about 6 × 108h at a 150 °C use condition. High temperature operating life testing using hard switched boost converters at 175 °C shows no measurable device degradation after 3000 h of operation. These results show that the intrinsic reliability of the new device technology is more than adequate for commercial and industrial power electronics applications. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
