A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors |
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| Affiliation: | 1. Institute of Circuits and Systems, Ningbo University, Ningbo 315211, China;2. Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo 315201, China;3. Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China;4. Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, 500 Dong-chuan Road, Shanghai 200241, China;1. Dept. of Electronics Eng., Incheon National Univ., Incheon 406-772, Republic of Korea;2. Dept. of Electronic Materials Eng., Kwangwoon Univ., Seoul 139-701, Republic of Korea |
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| Abstract: | The modeling of the transient subgap density of states (DOS) for the investigation of trap densities in the oxide-based thin-film transistors is proposed. The study is based on both transient measurements and physical modeling. In history, the subgap DOS modeling of trap densities have been studied according to the static-state current–voltage characteristics or the capacitance–voltage curves. However, the subgap DOS modeling for the transient curves is seldom proposed. In this study, the transient model of subgap DOS is discussed for amorphous In–Ga–Zn–O (a-IGZO) thin films. This model suggests the subgap DOS exhibits a transient behavior with an exponential distribution on the band edge and a Gaussian distribution in the deep gap level. This study could be helpful to understand and optimize the transient electrical properties of a-IGZO TFTs. |
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