Rail to rail radiation hardened operational amplifier in standard CMOS technology with standard layout techniques |
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| Affiliation: | 1. Instituto de Pesquisas Avançadas, São José dos Campos, Brazil;2. Instituto Tecnológico de Aeronáutica, São José dos Campos, Brazil;3. Universidade Federal do Rio Grande do Sul, Electrical Engineering Department, Porto Alegre, Brazil;1. Department of Electronics and Information Systems, University of Ghent, Sint Pietersnieuwstraat 41, 9000 Ghent, Belgium;2. Department of Microelectronics and Computer Science, Lodz University of Technology, Wolczanska 221/223, 90-924 Lodz, Poland;1. Department of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, Italy;2. Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, I-20133 Milan, Italy;3. Infineon Technologies AG, Neubiberg 85579, Germany;1. Thales Corporate Engineering, 19-21 avenue Morane Saulnier, 78140 Vélizy-Villacoublay, France;2. Université Paris Ouest, Laboratoire Thermique Interfaces Environnement (LTIE), EA 4415, 50 rue de Sèvres, 92410 Ville d''Avray, France;3. Université Paris XIII, Sorbonne Paris Cité, 93430 Villetaneuse, France;4. Ecole Nationale Supérieure d''Electricité et de Mécanique de Nancy, 2 Avenue de la Forêt de Haye, 54500 Vand?uvre-lès-Nancy, France |
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| Abstract: | This work presents a rail-to-rail operational amplifier hardened by design against ionizing radiation at circuit level, using only standard layout techniques. Not changing transistor layout, for instance by using enclosed layout structures, allows design and simulation using the standard models provided by the foundry. The circuit was fabricated on a standard 0.35 μm CMOS process, and submitted to a total ionizing dose (TID) test campaign using a 60Co radiation source, at a dose rate of 0.5 rad(Si)/s, reaching a final accumulated dose of 500 krad(Si). The circuit proved to be radiation tolerant for the tested accumulated dose. The design practices used to mitigate TID effects are presented and discussed in detail. |
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