Cross-sectional nanoprobing fault isolation technique on submicron devices

With continuous scaling on CMOS device dimensions, it is becoming increasingly challenging for conventional failure analysis (FA) methods to identify the failure mechanism at the circuit level in an integrated chip. Scanning Electron Microscopy (SEM) based nanoprobing is becoming an increasingly critical tool for identifying non-visual failures via electrical characterization in current electrical FA metrology for fault isolation since 2006 Toh et al. (2007), Shen et al. (2007), Ng et al. (2012) . Currently, most of the nanoprobing fault isolation is nanoprobe in top-down planar direction, such as nanoprobe on via, contact and metal line. This paper focused on fault isolation of sub-micron devices by nanoprobing on a cross-sectional plane. This is a new application area; it is very useful for sample that cannot perform fault isolation with conventional top-down planar nanoprobing, especially on non-volatile memory that with single transistor memory array that arrange in a vertical direction, such as Magnetic Random Access Memory (MRAM), Phase-Change Random Access Memory (PC-RAM), flash memory and etc.