A methodology for projecting SiO2 thick gate oxide reliability on trench power MOSFETs and its application on MOSFETs VGS rating |
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| Affiliation: | 1. STMicroelectronics, Stradale Primosole, 50, 95121 Catania, Italy;2. STMicroelectronics, Ang Mo Kio, Singapore;1. Department of Electrical Engineering/Electronics, Kyushu Institute of Technology, 1–1 Sensui, Tobata, Kitakyushu, 804–8550, Japan;2. Electronics Research Group for Sustainability, Asian Growth Research Institute, Kitakyushu, Japan;3. Next Generation Power Electronics Research Center, Kyushu Institute of Technology, Kitakyushu, Japan;1. Center for Innovative Integrated Electronic Systems, Tohoku University, 468-1, Aza-aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-0845, Japan;2. Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1, Tennodai, Tsukuba, Ibaraki 305-8573, Japan;3. Center for Spintronics Integrated Systems, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai, Miyagi 980-8577, Japan;4. Graduate School of Engineering, Tohoku University, 6-6, Aza-aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan;1. Department of Energy Technology, Aalborg University, Denmark;2. KK WindSolutions a/s, Denmark |
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| Abstract: | In this work, a methodology based on the E-model for the reliability projection of a thick (> 20 nm) SiO2 gate oxide on a vertical trench power MOSFET, is presented. Experimental results suggest that a Logic Level (LL) trench MOSFET with 35 nm of gate oxide can be rated at VGS = + 12 V if one assumes continuous DC Gate-Source bias of VGS = + 12 V at T = 175 °C for 10 years at a defect level of 1 Part Per Million (PPM). We will demonstrate that if we take into account MOSFET device lifetime as dictated by the Automotive Electronics Council (AEC Q101) mission profile, then devices can be rated higher to VGS = + 14.7 V at T = 175 °C for the same PPM level (1 PPM). The application of the methodology for establishing the oxide thickness, tox, for any required voltage rating, is discussed. |
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