Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks |
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| Affiliation: | 1. National Scientific and Technical Research Council (CONICET), Av. Rivadavia 1917, Buenos Aires, Argentina;2. Department of Electronic Engineering, National Technological University (UTN), Medrano 951, Buenos Aires, Argentina;3. GAIANN, Comision Nacional de Energia Atomica, Gral. Paz 1499 (1650), Buenos Aires, Argentina;4. Istituto per la Microelettronica e Microsistemi (IMM) Consiglio Nazionale delle Ricerche (CNR), Zona Industriale, Ottava Strada, 5, 95121 Catania, Italy;5. Department of Materials Science and Engineering, Technion — Israel Institute of Technology, 32000 Haifa, Israel;1. Department of Electrical·Electronic·Control Engineering, Kongju National University, Chungnam 331-717, Republic of Korea;2. Department of Mechanical Engineering, Kongju National University, Chungnam 331-717, Republic of Korea;3. Industry-University Cooperation Foundation, Kongju National University, Chungnam 314-701, Republic of Korea;1. School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, PR China;2. School of Mechanical Engineering, Tianjin University of Technology, Tianjin 300191, PR China |
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| Abstract: | In this work, the breakdown transients of metal-oxide-semiconductors (MOS) stacks with InGaAs channels and different oxide layers (Al2O3, HfO2 and Si3N4) have been studied in terms of the time-to-breakdown and the duration of the progressive breakdown regime. It is observed that dielectric layers with higher thermal conductivity show larger transient time during the progressive breakdown regime, and this provides a significant lifetime extension across the entire failure distribution. This is attributed to a lower temperature of the percolation path which reduces local electro-migration. Moreover, the overall results show that the progressive breakdown regime is uncorrelated with the initial degradation rate, and that the bending of failure distribution at low percentiles is exclusively attributed to the progressive increase of the gate current during the breakdown event. |
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