Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors |
| |
Affiliation: | 1. SEES, Depto. de Ingeniería Eléctrica, CINVESTAV-IPN, Av. IPN 2208, CP 07360 Mexico DF, Mexico;2. Materials Science and Engineering Department, University of Texas at Dallas, Richardson, TX 75080, USA;3. Department of Electrical Engineering, Centro Universitário da FEI, Av. Humberto de Alencar Castelo Branco, 3972, 09850-901 São Bernardo do Campo, Brazil |
| |
Abstract: | The temperature dependence in the typical temperature operating range from 300 K up to 370 K of the electrical characteristics of IGZO TFTs fabricated at temperatures not exceeding 200 °C is presented and modeled.It is seen that up to T = 330 K, the transfer curves show a parallel shift toward more negative voltages. In both subthreshold and above threshold regimes, the drain current shows Arrhenius-type dependence. In the latter case, for low temperatures, the activation energy is around 0.35 eV for VGS = 10 V, reducing as VGS is increased. The observed behavior is consistent with having the VRH transport mechanism as the predominant one in conduction. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|