Thermal characteristics and fabrication of silicon sub-mount based LED package |
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| Affiliation: | 1. Department of Electrical·Electronic·Control Engineering, Kongju National University, Chungnam 331-717, Republic of Korea;2. Department of Mechanical Engineering, Kongju National University, Chungnam 331-717, Republic of Korea;3. Industry-University Cooperation Foundation, Kongju National University, Chungnam 314-701, Republic of Korea;1. Univ. Grenoble Alpes, F-38000 Grenoble, France;2. CEA, LETI, MINATEC Campus, F-38054 Grenoble, France;3. CEA-INAC & CNRS, SPrAM, 17 rue des Martyrs, F-38054 Grenoble, France;4. CRG-IF BM32 at ESRF, BP 220, 38043 Grenoble Cedex 9, France;1. Centro de Investigación y Desarrollo en Procesos Catalíticos (CINDECA)-CONICET-Universidad Nacional de La Plata, La Plata, Argentina;2. Centro de Investigaciones del Medio Ambiente (CIMA)-Universidad Nacional de La Plata, La Plata, Argentina |
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| Abstract: | In this paper, the cost of a light emitting diode (LED) package is lowered by using a silicon substrate as the base attached to the chip, in contrast to the conventional chip-on-board (COB) package. In addition we proposed an LED package with a new structure to promote reliability and lifespan by maximizing heat dissipation from the chip. We designed an LED package combining the advantages of COB based on conventional metal printed circuit board (PCB) and the merits of a silicon sub-mount as a substrate. When an input current 500–1000 mA was applied, the fabricated LED exhibited the light output of approximately 112 lm/W at 29 W. We also measured and compared the thermal resistance of the sub-mount package and conventional COB package. The measured thermal resistance of the sub-mount package with a reflective film of Ag and the COB package were 0.625 K/W and 1.352 K/W, respectively. |
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