Advanced thermal simulation of SiGe:C HBTs including back-end-of-line |
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| Affiliation: | 1. Department of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, Italy;2. Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, I-20133 Milan, Italy;3. Infineon Technologies AG, Neubiberg 85579, Germany;1. Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, ROC;2. Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 824, Taiwan, ROC;3. National Nano Device Laboratories (NDL), National Applied Research Laboratories, Hsinchu 300, Taiwan, ROC;1. State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China;2. Jiangsu Key Laboratory of Advanced Food Manufacturing Equipment & Technology, Jiangnan University, Wuxi 214122, China;1. Materials Science and Engineering Program, University of California, San Diego, La Jolla, CA 92093, USA;2. Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA 92093, USA;3. TD Research, GLOBALFOUNDRIES USA Inc., 257 Fuller Road, Albany, NY 12203, USA;1. Department of Mechanical Engineering, Chang Gung University, Taiwan;2. Chemical Systems Research Division, Chung-Shan Inst. of Science and Technology, Taiwan;1. The Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;2. Jiangsu Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing 210009, China;3. School of Internet of Things Engineering, HoHai University, Changzhou, China |
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| Abstract: | Advanced 3-D thermal simulations of state-of-the-art SiGe:C HBTs are performed, which ensure improved accuracy with respect to conventional approaches. The whole back-end-of-line architecture is modeled so as to account for the cooling effect due to the upward heat flow. Moreover, a nonuniform power density is considered to describe the heat source, and thermal conductivity degradation effects due to germanium, doping profile, and phonon scattering in narrow layers are implemented. The numerical thermal resistances are compared with those experimentally evaluated by means of a robust technique relying on the temperature dependence of the base-emitter voltage. |
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