Improved performance of ITO/TiO2/HfO2/Pt random resistive accessory memory by nitrogen annealing treatment |
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| Affiliation: | 1. Physics Department, Science College, Al-Nahrain University, Iraq;2. Nano-Optoelectronics Research and Technology Laboratory (NOR Iab), School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia;1. STMicroelectronics, 850 Rue Jean Monnet, 38920 Crolles, France;2. CEA, LETI, Minatech Campus, 17 Rue des martyrs, 38054 Grenoble, France;1. Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 08826, South Korea;2. Department of Electronic Engineering, Gachon University, Gyeonggi-do 13120, South Korea;1. Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Republic of Korea;2. Institute of Nano Science and Technology, Hanyang University, Seoul 04763, Republic of Korea;1. State Key Laboratory of Low-Dimensional Quantum Physics, Collaborative Innovation Center of Quantum Matter, Department of Physics, Tsinghua University, Beijing, 100084, China;2. Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang, Sichuan, 621999, China |
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| Abstract: | Resistive switching (RS) characteristics of TiO2/HfO2 bilayer memory devices annealed under N2 and O2 ambient were investigated in this work. It was found that the improved RS properties were obtained in N2 annealing atmosphere, which exhibited good endurance of more than 100 times in direct current measurement mode and data retention properties of 104 s at 85 °C. To clarify the effect of annealing treatment on the devices in various atmospheres, conduction mechanism, which is related to the RS properties was analyzed. The results showed that the space charge limited current (SCLC) was the dominant conduction mechanism in HRS for the as prepared device; for the device annealed in N2, the conduction mechanism was dominated by Pool–Frenkel emission. It can be induced that the conduction mechanism variation in N2 was attributed to the increase of oxygen vacancies in the switching layer, which was the main reason for the improvement of RS characteristics. Lastly, we switched the operation voltage from the Pt to the ITO electrode of the double layer RRAMs, and found that better endurance and smaller operation voltages were obtained when it was applied on the Pt electrode. |
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