Zn0.95-xBe0.05MnxSe稀磁半导体的光谱特性分析

为了研究稀磁半导体Zn0.95-xBe0.05MnxSe (x分别为0.05,0.10,0.15,0.20)随温度变化的光学特性,采用电场调制反射光谱、表面光电压光谱及光激发荧光光谱等测量技术,进行了理论分析与实验验证,取得了一系列数据。结果表明,除x=0.1的样品外,其它样品的能隙会随Mn掺杂摩尔分数的增加而增大,这是由价带和导电中的电子和Mn中的d层电子彼此交换的相互作用产生的微小位移所致;温度升高时跃迁信号会向低能量方向移动,则是晶格-声子散射效应增加所致。

Analysis of spectral characteristics of Zn0.95-xBe0.05MnxSe diluted magnetic semiconductor

In order to study the temperature-dependent optical properties of dilute magnetic semiconductor Zn0.95-xBe0.05MnxSe (x is 0.05,0.10,0.15,0.20 respectively), based on electric field modulation reflectance spectroscopy, surface photovoltage spectroscopy and fluorescence excitation spectra, theoretical analysis and experimental verification were made and a series of data were obtained. The results show that, the energy gap of the other samples, except the sample of x=0.1, would increase with the increase of Mn doped mole fraction, caused by the slight displacement of exchange interaction between the electrons of the valence band and the conductive band and the electrons of d generation of Mn. Because of the increase of lattice-phonon scattering effect, the transition signal will move to the direction of low energy when temperature elevates.