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Gentle STEM: ADF imaging and EELS at low primary energies
Authors:Ondrej L Krivanek  Niklas Dellby  Matthew F Murfitt  Matthew F Chisholm  Timothy J Pennycook  Kazutomo Suenaga  Valeria Nicolosi
Affiliation:1. Nion Co., 1102 8th St., Kirkland, WA 98033, USA;2. Oak Ridge National Laboratory, Materials Science and Technology Division, Oak Ridge, TN 37831-6069, USA;3. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan;4. Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK
Abstract:Aberration correction of the scanning transmission electron microscope (STEM) has made it possible to reach probe sizes close to 1 Å at 60 keV, an operating energy that avoids direct knock-on damage in materials consisting of light atoms such as B, C, N and O. Although greatly reduced, some radiation damage is still present at this energy, and this limits the maximum usable electron dose. Elemental analysis by electron energy loss spectroscopy (EELS) is then usefully supplemented by annular dark field (ADF) imaging, for which the signal is larger. Because of its strong Z dependence, ADF allows the chemical identification of individual atoms, both heavy and light, and it can also record the atomic motion of individual heavy atoms in considerable detail. We illustrate these points by ADF images and EELS of nanotubes containing nanopods filled with single atoms of Er, and by ADF images of graphene with impurity atoms.
Keywords:STEM  ADF  EELS  Aberration correction  Nanotube  Graphene
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