Microwave noise performance of InP/InGaAs heterostructure bipolartransistors |
| |
| Authors: | Chen Y-K Nottenburg RN Panish MB Hamm RA Humphrey DA |
| |
| Affiliation: | AT&T Bell Lab., Murray Hill, NJ; |
| |
| Abstract: | The authors report the first low-noise InP/InGaAs heterostructure bipolar transistor (HBT). Minimum noise figures of 0.46, 2.0, and 3.33 dB were measured at 2, 10, and 18 GHz, respectively. The noise performance of this InP/InGaAs HBT with an emitter size of 3.5×3.5 μm2 is compared to that for FETs having a 1-μm gate length. The measured minimum noise figures agree well with calculated data using a modified Hawkins model. Broadband low-noise operation is observed because of the short transit time for injected nonequilibrium electrons to transverse the base and collector depletion region |
| |
| Keywords: | |
|
|
