典型器件和电路不同剂量率的辐射效应

对几十种不同类型的典型星用器件和电路在不同剂量率辐照下的响应规律及退火特性进行了研究。对双极器件和电路及JFET输入运算放大器电路产生低剂量率损伤增强效应的机理进行了分析。结果显示,器件类型不同,失效模式也相异。其典型的失效模式表现为4种:a)仅有低剂量率辐照损伤增强效应;b)既有低剂量率辐照损伤增强效应,又有时间相关效应;c)仅有时间相关效应;d)无不同剂量率辐照损伤间的差异。

Radiation effects of the typical devices and circuits for high and low dose rate irradiations

Dozens of types of typical devices and circuits applied to satellites are investigated on their radiation effects and annealing behaviors under different dose-rate irradiation. The experimental results show that the failure modes are different with different types of devices. The typical failure modes are as follows： a） only Enhanced Low Dose Rate Sensitivity（ELDRS） is exhibited; b） both ELDRS and Time Dependent Effect（TDE） are found in some devices; c） just shows TDE; and d） no distinctness in the degradation appears with different dose rates. The mechanisms of ELDRS which is shown in bipolar devices and operational amplifiers with JFET input-stages are discussed in detail.