Lateral n-channel inversion mode 4H-SiC MOSFETs |
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Authors: | Sridevan S Jayant Baliga B |
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Affiliation: | Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC; |
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Abstract: | Advances in MOS devices on silicon carbide (SiC) have been greatly hampered by the low inversion layer mobilities. In this paper, the electrical characteristics of lateral n-channel MOSFETs fabricated on 4H-SiC are reported for the first time. Inversion layer electron mobilities of 165 cm2/V·s in 4H-SiC MOSFETs were measured at room temperature. These MOSFETs were fabricated using a low temperature deposited oxide, with subsequent oxidation anneal, as the gate dielectric |
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