Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks |
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Authors: | E. Miranda, J. Martin-Martinez, E. O Connor, G. Hughes, P. Casey, K. Cherkaoui, S. Monaghan, R. Long, D. O Connell,P.K. Hurley |
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Affiliation: | aEscola Tècnica Superior d’Enginyeria, Universitat Autònoma de Barcelona, Barcelona, Spain;bTyndall National Institute, University College Cork, Cork, Ireland;cSchool of Physical Sciences, Dublin City University, Glasnevin, Dublin 9, Ireland |
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Abstract: | The degradation dynamics and post-breakdown current–voltage (I–V) characteristics of magnesium oxide (MgO) layers grown on n and p-type indium phosphide (InP) substrates subjected to electrical stress were investigated. We show that the current–time (I–t) characteristics during degradation can be described by a power-law model I(t) = I0t−α, where I0 and α are constants. It is reported that the leakage current associated with the soft breakdown (SBD) failure mode follows the typical voltage dependence I = aVb, where a and b are constants, for both injection polarities but in a wider voltage range compared with the SiO2/Si system. It is also shown that the hard breakdown (HBD) current is remarkably high, involving large ON–OFF fluctuations that resemble the phenomenon of resistive switching previously observed in a wide variety of metal oxides. |
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