High-temperature operation of 1.55 ?m InGaAsP double-channel buried-heterostructure lasers grown by LPE |
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| Authors: | Besomi P Wilson RB Brown RL Dutta NK Wright PD Nelson RJ |
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| Affiliation: | AT&T Bell Laboratories, Murray Hill, USA; |
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| Abstract: | High-temperature operation of InGaAsP double-channel buried-heterostructure (DCBH) lasers emitting at 1.55 ?m is reported. The 1.55 ?m InGaAsP DCBH lasers have threshold currents as low as 18 mA at 20°C. The threshold current temperature sensitivity between 10°C and 75°C is characterised by a T0 value of 55?66 K. Electro-optical derivative measurements show that the 1.55 ?m InGaAsP DCBH laser does not have substantial above-threshold leakage current for junction temperatures as high as 75°C. Finally, these devices were operated at temperatures as high as 110°C, the highest CW operating temperature obtained to date for a 1.55 ?m InGaAsP laser. |
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