超晶格雪崩光电二极管

已经提出了几种可以提高载流子离化率比的超晶格雪崩光电管:量子阱雪崩光电管、台阶型雪崩光电管和掺杂量子阱雪崩光电管。这几种器件都主要是利用异质界面带隙突变导致的电子离化几率相对于空穴离化几率的显著增大,从而可以获得低的雪崩噪声和高的增益—带宽乘积。本文概述了这几种器件的结构、工作原理以及结构参量对器件性能的影响。

Superlattice Avalanche Photodiodes

Three kinds of superlattice avalanche photo-diodes(SAPD) which can enhance the carrier ionization ratio have been proposed by several authers. They are the quantum well SAPD, the staircase SAPD, and the doping quantum well SAPD. All of them mainly make use of the effect of bandedge discontinuity on heterojunction which can lead to the enhancement in the ratio of electron impact ionization probabiliyt as compared to hole's. Therefore, they can provide high gain with very low noise. This paper summarizes the structures,the operating principles and the influence of the structure parameters on the performance of these devices.