| 板上芯片固化及热处理过程中表面残余应力的演变 |
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| 引用本文： | 孙志国,张群,黄卫东,蒋玉齐,程兆年,罗乐. 板上芯片固化及热处理过程中表面残余应力的演变[J]. 半导体学报, 2002, 23(8): 874-880. DOI: 10.3969/j.issn.1674-4926.2002.08.017 |
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| 作者姓名： | 孙志国 张群 黄卫东 蒋玉齐 程兆年 罗乐 |
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| 作者单位： | 中国科学院上海微系统与信息技术研究所,上海,200051 |
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| 基金项目： | 国家重点基础研究发展计划(973计划);G1999033108; |
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| 摘 要： | 利用硅压阻传感器实时原位地记录粘接剂固化过程中的应力变化和残余应力的分布状况,以及在热处理过程中应力的演化过程.研究表明,若粘合剂固化后在空气中储存20天,应力将在后续热处理过程中急剧增加;而固化后接着经历峰值为150℃左右的热处理过程,则可以使残余应力稳定在一个相对低的值.
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| 关 键 词： | 硅压阻应力传感器 固化 热处理 残余应力 |
| 文章编号： | 0253-4177(2002)08-0874-07 |
| 修稿时间： | 2001-10-31 |
Evolution Residual In-Plane Stress During Curing Process and Thermal Treatment of COB Packages |
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| Sun Zhiguo,Zhang Qun,Huang Weidong,Jiang Yuqi,Cheng Zhaonian and Luo Le. Evolution Residual In-Plane Stress During Curing Process and Thermal Treatment of COB Packages[J]. Chinese Journal of Semiconductors, 2002, 23(8): 874-880. DOI: 10.3969/j.issn.1674-4926.2002.08.017 |
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| Authors: | Sun Zhiguo Zhang Qun Huang Weidong Jiang Yuqi Cheng Zhaonian Luo Le |
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| Abstract: | A silicon piezoresistive sensor is applied here to in-situ record the curing stress profile,the distributions of the residual stress and the stress evolution profile during thermal treatment. It is also found that the residual stress will accumulate dramatically in the thermal treatment after 20 days' storage in air after the curing process,while the residual stress will be stabilized in a relatively low level after thermal treatment next to the curing process. |
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| Keywords: | silicon piezoresistive sensor curing thermal treatment residual stress |
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