Fabrication and Characterization of Small Unit-Cell Molecular Beam Epitaxy Grown HgCdTe-on-Si Mid-Wavelength Infrared Detectors |
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Authors: | E P G Smith G M Venzor Y Petraitis M V Liguori A R Levy C K Rabkin J M Peterson M Reddy S M Johnson J W Bangs |
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Affiliation: | (1) Raytheon Vision Systems, Goleta, CA 93117, USA |
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Abstract: | Small 15 μm unit-cell mid-wavelength infrared (MWIR) detectors have been fabricated and characterized at Raytheon Vision Systems (RVS)
to enable the development of high resolution, large format, infrared imaging systems. The detectors are fabricated using molecular
beam epitaxy (MBE) grown 4-in. HgCdTe-on-Si wafers with a p-on-n double layer heterojunction (DLHJ) device architecture. Advanced fabrication processes, such as inductively coupled plasma
(ICP) etching, developed for large format MBE-on-Si wafers and 20 μm unit-cell two-color triple layer heterojunction (TLHJ) focal plane arrays (FPAs) have been successfully extended and applied
to yield high performance 15 μm unit-cell single color detectors that compare favorably with state-of-the-art detectors with larger pitch. The measured
78 K MWIR cut-off wavelength for the fabricated detectors is near 5.5 μm, and the current–voltage characteristics of these devices exhibit strong reverse breakdown and RoA performance as a function
of temperature with diffusion limited performance extending to temperatures down to 120 K. |
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Keywords: | HgCdTe infrared detectors molecular beam epitaxy (MBE) small pixel 15 μ m unit-cell large format inductively coupled plasma (ICP) |
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