| In_（0．53）Ga_（0．47）A_S表面钝化及降低界面态密度的方法 |
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| 引用本文： | 管玉国,戴国瑞,赵军. In_（0．53）Ga_（0．47）A_S表面钝化及降低界面态密度的方法[J]. 微纳电子技术, 1996, 0(4) |
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| 作者姓名： | 管玉国 戴国瑞 赵军 |
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| 作者单位： | 吉林大学电子工程系 |
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| 摘 要： | 采用ＰＥＣＶＤ技术，以ＴＥＯＳ为源，对Ｉｎ０．５３Ｇａ０．４７Ａｓ材料进行表面钝化，研究了ＳｉＯ２／Ｉｎ０．５３Ｇａ０．４７Ａｓ的界面态，提出降低界面态密度的方法，使其降低到８．５×１０１０ｅＶ－１ｃｍ－２．
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| 关 键 词： | 钝化方法，界面态密度 |
Method of Surface Passivations and Decreasing Interface States for In_(0.53)Ga_(0.47)A_S Materials |
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| Guan Yuguo,Dai Guorui,Zhao Jun. Method of Surface Passivations and Decreasing Interface States for In_(0.53)Ga_(0.47)A_S Materials[J]. Micronanoelectronic Technology, 1996, 0(4) |
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| Authors: | Guan Yuguo Dai Guorui Zhao Jun |
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| Abstract: | The surface passivations of In_(0.53) Ga_(0.47) As materials have been reported in the paper. SiO_2 thin films with TEOS as aprecursor,were prepared by means of PECVD technique.Interface states of SiO_2/In_(0.53)Ga_(0.47)As were investigated and the method of decreasing interface states to 8.5×10￣(10)eV￣-1cm￣-2 was suggested. |
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| Keywords: | Passivation method Interface state densities |
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