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InP/InGaAsP avalanche photodiodes with new guard ring structure |
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| Authors: | Osaka F. Nakazima K. Kaneda T. Sakurai T. Susa N. |
| Affiliation: | Fujitsu Laboratories Ltd., Kawasaki, Japan; |
| Abstract: | A new guard ring structure for InP/InGaAsP avalanche photodiodes is described, which makes use of the impurity concentration difference between two InP epitaxial layers. The guard ring effect gives a low dark current and uniform multiplication characteristics at ? = 1.29 ?m. |
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