The Influence of Bi Doping on the In Situ Growth of TlBa2Ca2Cu3O9 High-Tc Films |
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| Authors: | N Reschauer H H Wagner W Brozio U Spreitzer T Schauer K F Renk J D O'Connor D Dew-Hughes M J Goringe C R M Grovenor T Kaiser and H Piel |
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| Affiliation: | (1) Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany;(2) Physik Department E10, Technische Universität München, 85747 Garching, Germany;(3) Department of Engineering Science, University of Oxford, Oxford, OX1 PJ, UK;(4) Department of Materials, University of Oxford, Oxford, OX1 PJ, UK;(5) Fachbereich Physik, Bergische Universität GH Wuppertal, 42097 Wuppertal, Germany |
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| Abstract: | The in situ process—laser ablation in combination with thermal evaporation of Tl2O—has turned out to be a preparation method for single-phase and epitaxial TlBa2Ca2Cu3O9 (1223) thin films with T
c values up to 109 K. It was found by several groups that a partial substitution of Tl by Bi simplifies the phase development of the 1223 compound in the usual two-step process. We have investigated the influence of the Bi doping on the in situ growth. X-ray measurements show that the films consisted mainly of the 1223 compound. In 300-nm thin films there was no evidence of a Bi amount in the crystal structure, but thinner films (80 nm) show a small amount of Bi. We concluded that Bi doping supports the phase development of the 1223 compound only in an early stage of the film growth. The Bi-doped films have higher T
c values up to 114 K, higher j
c values up to 6 × 105 A/cm2 (77 K, 0 T), and lower surface resistances of 56 m (77 K, 87 GHz) than the undoped films. |
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| Keywords: | TlBa2Ca2Cu3O9 films In Situ growth |
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