A small geometry MOSFET model for CAD applications |
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| Authors: | P.P. Guebels F. van de Wiele |
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| Affiliation: | Bell Tel. Mfg Co., F. Wellesplein 1, 2000 Antwerpen, Belgium;Université Catholique de Louvain, Place du Levant 3, 1384 Louvain-la-Neuve, Belgium |
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| Abstract: | A d.c. model for the CAD analysis of small geometry MOSFET's is presented. It includes the drain induced barrier lowering phenomena, the narrow channel effect and the hot carrier phenomena. A single current expression valid in continuous way over the entire range of operation, including the subthreshold and the saturation regimes, is provided. |
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