Design and analysis of a RF MEMS shunt switch using U-shaped meanders for low actuation voltage

This paper presents the design and simulation of RF MEMS switch using uniform U-Shaped meanders. High isolation and low insertion loss are the main performance parameters enhanced by considering the inductive sections on the design and developing high capacitance using HfO₂ as a dielectric medium. The inductive sections in the design help maintain the device at resonance. The proposed uniform U-shaped meanders lower the spring constant and reduce the Pull-in-voltage of the switch. The performance characteristics are observed by simulating the proposed switch in the electromechanics environment using the COMSOL FEM tool. The switch exhibits a low Pull-in-voltage of 5.2 V with a very low switching time of 23.1 µs. Total capacitance of 42.19 fF is formed during upstate which provides a low insertion loss of less than 0.1 dB. Capacitance of 19.11 pF during downstate provides high isolation of − 42.11 dB.