High performance AlyGa1−yAs-GaAs-lrxGa1−xAs quantum well lasers defined by silicon-oxygen impurity-induced layer disordering |
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Authors: | J. S. Major L. J. Guido N. Holonyak K. C. Hsieh E. J. Vesely D. W. Nam D. C. Hall J. E. Baker P. Gavrilovic K. Meehan W. Stutius J. E. Williams |
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Affiliation: | (1) Polaroid Corporation, 02139 Cambridge, MA;(2) Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, 61801 Urbana, Illinois;(3) Materials Research Laboratory, University of Illinois at Urbana-Champaign, 61801 Urbana, Illinois |
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Abstract: | In these experiments impurity-induced layer disordering (IILD) utilizing chemical reduction of SiO2 by Al (from Al0.8Ga0.2As) is employed to generate Si and O to effect layer disordering. The SiO2-Al0.8Ga0.2As reaction is studied with respect to annealing ambient. By controlling the extent of disordering via As4 overpressure, closely spaced (∼1μm) Si-O IILD buried heterostructure lasers can be optically coupled or uncoupled. Direct observation of O incorporation into the buried layers is shown using secondary ion mass spectroscopy (SIMS). The thermal stability of separate-confinement AlyGa1−yAs-GaAs-InxGa1−xAs quantum well heterostructure (QWH) laser crystals is investigated using SIMS, transmission electron microscopy (TEM), and photoluminescence (PL) measurements. The data show that the thermal stability of a strained-layer In0.1Ga0.9As quantum well (QW) is strongly dependent upon: (1) the layer thickness and heterointerfaces of the AlyGa1−yAs-GaAs waveguide layers located directly above and below the QW, (2) the type of surface encapsulant employed, and (3) the annealing ambient. Narrow single-stripe (<2μm) lasers fabricated via Si-O diffusion and layer disordering exhibit low threshold currents (Ith ∼ 4 mA) and differential quantum efficiencies,η, of 22% per facet under continuous (cw) room-temperature operation. |
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Keywords: | InGaAs strained-layer laser AlGaAs-GaAs-InGaAs quantum well heterostructure impurity-induced layer disordering (IILD) Si-O IILD coupled-stripe laser |
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