| 一种非带隙结构基准源的设计及特性分析 |
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| 引用本文： | 陈华,周锋,李舜,严伟. 一种非带隙结构基准源的设计及特性分析[J]. 固体电子学研究与进展, 2008, 28(1): 105-108 |
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| 作者姓名： | 陈华 周锋 李舜 严伟 |
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| 作者单位： | 复旦大学专用集成电路与系统国家重点实验室,上海,201203 |
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| 摘 要： | 设计了一种非带隙结构的电压基准源,并对该基准源作了电源抑制特性的理论分析。这一设计在Chart-ed0.35μm CMOS工艺条件下流片实现,在3~110°C的温度范围内测试结果达到了17.4ppm/°C的性能。
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| 关 键 词： | 低功耗 电压基准源 非带隙结构 电源噪声抑制 |
| 文章编号： | 1000-3819(2008)01-105-04 |
| 修稿时间： | 2007-04-01 |
Design of a Non-bandgap Voltage Reference and Its Characteristic Analysis |
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| CHEN Hua,ZHOU Feng,LI Shun,YAN Wei. Design of a Non-bandgap Voltage Reference and Its Characteristic Analysis[J]. Research & Progress of Solid State Electronics, 2008, 28(1): 105-108 |
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| Authors: | CHEN Hua ZHOU Feng LI Shun YAN Wei |
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| Affiliation: | CHEN Hua ZHOU Feng LI Shun YAN Wei(ASIC & System State Key Laboratory,Fudan University,Shanghai,201203,CHN) |
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| Abstract: | With the trend of low-power,low-voltage in IC design,conventional bandgap voltage reference will not be the most suitable candidate any more.In this paper a non-bandgap voltage reference is designed and its power supply noise rejection is also analyzed.The circuit is fabricated with Charted 0.35μm CMOS technology.The measured results demonstrate the validity of our design and analysis. |
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| Keywords: | low power voltage reference non-bandgap structure power supply noise rejection |
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