Electrical properties of sputtered (Ba, Sr)TiO3 thin films prepared by two-step deposition method |
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Authors: | Byoung Taek Lee Wan Don Kim Ki Hoon Lee Han Jin Lim Chang Seok Kang Horii Hideki Suk Ho Joo Hong Bae Park Cha Young Yoo Sang In Lee Moon Yong Lee |
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Affiliation: | (1) Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., San#24, Nongseo-lee, Kiheung-eup, Yongin-si, 449-900 Kyungki-do, Korea |
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Abstract: | The influence of two-step deposition on the electrical properties of sputtered (Ba,Sr)TiO3 thin films was investigated. BST thin films with thickness 40 nm were deposited by a simple two-step radio frequency-magnetron
sputtering technique, where the BST thin film consisted of a seed layer and a main layer. The dielectric constant was strongly
dependent on the thickness of seed layer, but there was no dependence on deposition temperature of the seed layer. For a 2
nm seed layer, the dielectric constants were higher by about 29% than those of single-step BST thin films due to higher crystallinity
and the leakage current was nearly the same as that of a single-step sample in bias voltage from −2 to 2.5 V. However, an
improvement of the dielectric constant was not observed for samples having above 4 nm thick seed layers. A 40 nm thick BST
film with 2 nm thick seed layer deposited by a two-step method exhibited a SiO2 equivalent thickness of 0.385 nm and a leakage current density of 2.74 × 10−8A/cm2at+1.5V after post-annealing under an atmosphere of flowing N2 for 30 min at 750°C. |
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Keywords: | BST seed layer sputtering two-step deposition |
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