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波长和气氛对激光诱导硅表面微结构的影响
引用本文:袁春华,李晓红,唐多昌,杨宏道.波长和气氛对激光诱导硅表面微结构的影响[J].激光技术,2010,34(5):647-649.
作者姓名:袁春华  李晓红  唐多昌  杨宏道
作者单位:1.西南科技大学, 理学院, 激光与光电子实验室, 极端条件物质特性实验室, 绵阳, 621010
基金项目:四川省教育厅青年基金资助项目,西南科技大学博士研究基金资助项目 
摘    要:为了研究特定气氛下激光辐照对单晶硅表面微结构的影响,采用红外(基频波长1064nm)和紫外(3次谐波波长355nm)YAG纳秒激光脉冲连续辐照方法,分别在SF6、空气、N2和真空环境下对硅表面微结构进行了实验研究。得到红外纳秒激光在SF6和空气中形成的微结构较真空和N2下有更高的纵横比;紫外纳秒激光在SF6和真空中产生的锥形结构比N2和空气中要更为显著,但SF6中形成的微结构上有絮状物的结果。结果表明,激光波长和环境气氛对微结构的形成起着决定性作用,且激光辅助化学刻蚀的效率不同。该结果对深入研究纳秒激光在特定气氛下诱导硅表面微结构是有帮助的。

关 键 词:激光物理    表面微结构    纳秒激光辐照    
收稿时间:2009-09-17
修稿时间:2009-10-26

Influence of wavelength and atmospheres for laser pulses induced surface microstructures on silicon
YUAN Chun-hua,LI Xiao-hong,TANG Duo-chang,YANG Hong-dao.Influence of wavelength and atmospheres for laser pulses induced surface microstructures on silicon[J].Laser Technology,2010,34(5):647-649.
Authors:YUAN Chun-hua  LI Xiao-hong  TANG Duo-chang  YANG Hong-dao
Abstract:In order to study microstructure of single crystal silicon wafers under laser irradiation in different ambient atmosphere, the microstructure of silicon surface irradiated by infrared(IR, fundamental wavelength 1064nm) and ultraviolet (UV, third harmonic wavelength 355nm) Nd:YAG nanosecond laser in SF6,air, N2 and vacuum was experimentally studied respectively. It is seen that the microstructure formed in SF6 or air atmosphere by IR nanosecond laser irradiation has higher aspect ratio than that formed in vacuum or N2 atmosphere, and the microstructure formed in SF6 or vacuum atmosphere by UV nanosecond laser irradiation is more outstanding than that formed in air or N2 atmosphere, however the microstructure created in SF6 atmosphere have some flocculation material. The results show that formation of microstructure depends on laser wavelength and ambient atmosphere, and the efficiency of laser-induced chemical etching is different.The results are helpful to further study about nanosecond laser induced microstructure on silicon surface.
Keywords:laser physics  surface micro-structures  nanosecond laser irradiation  silicon
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