| 新型功率器件SON-LDMOS的设计和研究 |
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| 引用本文： | 高正鑫, 程秀兰.新型功率器件SON-LDMOS的设计和研究[J].电子器件,2009,32(2). |
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| 作者姓名： | 高正鑫 程秀兰 |
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| 作者单位： | 上海交通大学微电子学院,上海,200240 |
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| 摘 要： | 本文提出了一种新型的对称式SON LDMOS功率器件.在对器件击穿电压进行解析分析的基础上,利用Silvaco TCAD仿真软件Atals验证了漂移区设计对器件击穿电压的影响,证明了峰值击穿电压的存在.并且对比分析了SON LD-MOS与SOI LDMOS击穿电压和寄生电容方面的优势,研究表明SON LDMOSD在击穿电压上比SOI LDMOS器件提高了近3倍,并且其寄生电容也较小,这为SON LDMOS在功率方面的应用提供了部分理论支持.
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| 关 键 词： | 击穿电压 |
Design and Research of a Novel High Voltage Power Device:SON-LDMOS |
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| GAO Zheng-xin,CHENG Xiu-lan.Design and Research of a Novel High Voltage Power Device:SON-LDMOS[J].Journal of Electron Devices,2009,32(2). |
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| Authors: | GAO Zheng-xin CHENG Xiu-lan |
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| Affiliation: | School of Microelectronics;Shanghai Jiao Tong University;Shanghai 200240;China |
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| Abstract: | A novel power device-Symmetrical SON-LDMOS was designed and proposed.Based on analytical approach and Atalas Device Simulation,the effects of key structure factors,such as drift length and doping profile,on breakdown voltage of the device were analyzed,testifying the peak breakdown voltage.And comparing with conventional SOI-LDMOS and patterned SOI-LDMOS,it was found SON-LDMOS has better characteristics in breakdown-voltage,leakage current and parasitic capacitance.Breakdown voltage of SON LDMOS is 3 times ... |
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| Keywords: | SOI SON LDMOS |
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