A Millimeter-Wave (23–32 GHz) Wideband BiCMOS Low-Noise Amplifier |
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| Authors: | El-Nozahi M Sanchez-Sinencio E Entesari K |
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| Affiliation: | Department of Electrical and Computer Engineering, Texas A&M University, College Station, TX, USA; |
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| Abstract: | This paper presents a 23–32 GHz wideband BiCMOS low-noise amplifier (LNA). The LNA utilizes coupled-resonators to provide a wideband load. To our knowledge, the proposed LNA achieves the widest bandwidth with minimum power consumption using 0.18 $mu$m BiCMOS technology in K-band. Analytical expressions for the wideband input matching, gain, noise figure and linearity are presented. The LNA is implemented using 0.18 $mu$m BiCMOS technology and occupies an area of 0.25 mm$^2$ . It achieves a voltage gain of 12 dB, 3-dB bandwidth of 9 GHz, noise figure between 4.5–6.3 dB, linearity higher than ${-}$6.4 dBm with a power consumption of 13 mW from a 1.5 V supply. |
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