Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride |
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| Authors: | A E Belyaev N S Boltovets V N Ivanov V P Klad’ko R V Konakova Ya Ya Kudrik A V Kuchuk V V Milenin Yu N Sveshnikov V N Sheremet |
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| Affiliation: | (1) Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 45, Kiev, 03028, Ukraine;(2) State Enterprise Research Institute Orion, ul. é. Pot’e 8A, Kiev, 03057, Ukraine;(3) ZAO élma-Malakhit, Zelenograd, Moscow, 124460, Russia |
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| Abstract: | A mechanism of charge transport in Au-TiB x -n-GaN Schottky diodes with a space charge region considerably exceeding the de Broglie wavelength in GaN is studied. Analysis of temperature dependences of current-voltage (I–V) characteristics of forward-biased Schottky barriers showed that, in the temperature range 80–380 K, the charge transport is performed by tunneling along dislocations intersecting the space charge region. Estimation of dislocation density ρ by the I–V characteristics, in accordance with a model of tunneling along the dislocation line, gives the value ρ ≈ 1.7 × 107 cm?2, which is close in magnitude to the dislocation density measured by X-ray diffractometry. |
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