Hole mobility in ultrathin body SOI pMOSFETs with SiGe or SiGeC channels |
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| Authors: | Hallstedt J von Haartman M Hellstrom P-E Ostling M Radamsson HH |
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| Affiliation: | Sch. of Inf. & Commun. Technol., R. Inst. of Technol., Kista, Sweden; |
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| Abstract: | The hole mobilities of SiGe and SiGeC channel pMOSFETs fabricated on ultrathin silicon-on-insulator substrates are investigated and compared with reference Si channel devices. The total thickness of the fully depleted Si/SiGe(C)/Si body structure is /spl sim/ 25 nm. All devices demonstrated a near ideal subthreshold behavior, and the drive current and mobility were increased with more than 60% for SiGe and SiGeC channels. When comparing SIMOX and UNIBOND substrates, no significant difference could be detected. |
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