An alternative to source degeneration of CMOS differential pair |
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Authors: | Aimad El Mourabit Mohamed-halim Sbaa Guo-Neng Lu Patrick Pittet |
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Affiliation: | (1) National School of Applied Sciences of Tangier, Tangier, Morocco;(2) ST Microelectronics, Design Center, Rabat, Morocco;(3) INL de Lyon, Lyon, France;(4) University Claude Bernard, Lyon, France |
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Abstract: | This paper presents a method to extend linear range of conventional CMOS source-coupled pair with transistor polarised on
saturation of strong inversion. The used principle is similar to the principle of source degeneration, but the additional
device is horizontally added, in parallel with the input transistors, which overcame the constraints on common mode range
and supply voltage and allow low voltage operation. SPICE simulations using 0.35 μm CMOS process and a bias current of 10 μA,
show that for less than 1% of transconductance variation, the linear range is up to 0.35 V
pp in comparison to 0.1 V
pp for source-degenerated pair, and 0.01 V
pp for conventional differential pair, under the same biasing current and geometrical dimensions. |
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Keywords: | |
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