Charge density and bare surface barrier height in GaN/AlGaN/GaN heterostructures: A modeling and simulation study |
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Authors: | Joydeep Ghosh Dipankar Saha Swaroop Ganguly Apurba Laha |
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Affiliation: | Department of Electrical Engineering, IIT Bombay, Mumbai, India |
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Abstract: | In this article, we present a physics‐based model to explain the effect of the GaN cap layers on the 2D electron gas density and the bare surface barrier height in AlGaN/GaN heterostructures. We consider that the 2DEG originates from the surface donor states present on the GaN cap top surface. The influence of a 2D hole gas, formed when the valence band crosses the Fermi energy level, has also been considered. This model agrees well with the published experimental results and TCAD simulations, and can easily be incorporated into the modeling of GaN/AlGaN/GaN‐based HEMT devices. |
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Keywords: | AlGaN/GaN heterostructure GaN‐capping layer surface donor states |
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