| KrF准分子激光移相光刻在HEMT栅加工中的应用 |
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| 引用本文： | 钱鹤 刘训春. KrF准分子激光移相光刻在HEMT栅加工中的应用[J]. 固体电子学研究与进展, 1998, 18(1): 94-100 |
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| 作者姓名： | 钱鹤 刘训春 |
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| 作者单位： | 中国科学院微电子中心 |
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| 摘 要： | 将KrF准分子激光无铬接触式移相光刻应用于深亚微米HEMT栅图形加工，自行设计、组装了一套实验系统，很好地解决了这一器件制作的关键工艺问题。分别采用石英版移相和衬底移相方式，可重复可靠地得到剖面陡直的（0．30—0．35）μm和（0．2—0．25）μm胶阴线条，这一工艺技术完全与现有器件工艺技术兼容，为HEMT深亚微米栅加工提供了一个新的可供选择的方法，文中还从计算机模拟角度对上述两种移相光刻方式作了分析。
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| 关 键 词： | 移相光刻 深亚微米HEMT |
KrF Excimer Laser Phase-shifting Lithography in HEMT Fabrication |
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| Qian He, Liu Xuncun, Wang Runmei, Ou Wen, Zhang Xue, Cao Zhenya, Wu Dexin. KrF Excimer Laser Phase-shifting Lithography in HEMT Fabrication[J]. Research & Progress of Solid State Electronics, 1998, 18(1): 94-100 |
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| Authors: | Qian He Liu Xuncun Wang Runmei Ou Wen Zhang Xue Cao Zhenya Wu Dexin |
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| Abstract: | Chromeless phase-shifting lithography is adopted in HEMT gate pattern formation for its innate advantages of high resolution and high production efficiency. Photoresist patterns of (0. 3-0. 35) μm and (0. 2-0. 25 ) μm are achievedby means of phase-shifter on mask and on wafer,respectively. Both the simulationsand experiments show that the gap between the shifter and the substrate has asignificant influence on the line width of photoresist. A method making the shifterclosely contact to the substrate is proposed in this paper. |
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| Keywords: | Phase-shifting Lithography Deep Sub-micron HEMT |
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