Improved Thermoelectric Properties in Ga2Te3-GaSb Vacancy Compounds

Thermoelectric materials with high figure of merit, which requires large Seebeck coefficient, large electrical conductivity, and low thermal conductivity, are of great importance in solid-state cooling and power generation. Solid-solution formation is one effective method to achieve low thermal conductivity by phonon scattering due to mass and strain field fluctuations. This type of scattering is maximized in structures containing vacancies. The thermoelectric properties of Ga₂Te₃-GaSb vacancy compounds were studied in this work. We find that the lattice thermal conductivity is reduced by over an order of magnitude with the addition of only very moderate amounts of Ga₂Te₃. Additionally, both the carrier type and concentration can be modified. While the vacancy structure induced by Ga₂Te₃ addition to GaSb can effectively reduce phonon conductivity, carrier mobility is also degraded, and optimized thermoelectric properties require careful control of the vacancy content in these solid solutions.