|
|||||
|
|
Thermoelectric Performance of Sb- and La-Doped Mg2Si0.5Ge0.5 |
|
| Authors: | Xiaoyuan Zhou Guoyu Wang Hang Chi Xianli Su James R. Salvador Wei Liu Xinfeng Tang Ctirad Uher |
| Affiliation: | 1. Department of Physics, University of Michigan, Ann Arbor, MI, 48109, USA 3. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, People??s Republic of China 2. Chemical Sciences and Materials Systems Laboratory, GM Global Research, Warren, MI, 48090, USA |
| Abstract: | La x Mg2?x Si0.49Ge0.5Sb0.01 compounds (x?=?0, 0.005, 0.01, 0.02) were synthesized by solid-state reaction followed by spark plasma sintering. The thermoelectric properties, such as the Seebeck coefficient, the electrical and thermal conductivities, and ZT, of these compounds have been studied in the temperature range of 300?K to 823?K. The figure of merit of this n-type compound has been raised above unity at 823?K for the sample with x?=?0.01, a value 60% higher than that of Mg2Si0.49Ge0.5Sb0.01. The reduction of the thermal conductivity via increasing phonon scattering is considered as the main reason for the enhanced ZT. These observations demonstrate an opportunity to improve the thermoelectric performance of Mg2Si1?x Ge x solid solutions. |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ | |